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RFD16N06LESM
Data Sheet
N-Channel Logic Level Power MOSFET
60 V, 16 A, 47 m?
These are N-Channel power MOSFETs manufactured
using a modern process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA49027.
Ordering Information
October 20 13
Features
? 16A, 60V
? r DS(ON) = 0.047 ?
? Temperature Compensating PSPICE ? Model
? Can be Driven Directly from CMOS, NMOS, TTL
Circuits
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
PART NUMBER
RFD16N06LESM 9A
PACKAGE
TO-252AA
BRAND
16N06LE
D
G
S
Packaging
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
?2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. C0
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